Lattice-matched and strained InGaAs solar cells for thermophotovoltaic use

Journal Article · Wed Jan 31 23:00:00 EST 1996 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.49699· OSTI ID:285311

Jain, R K ^[1]; Wilt, D M ^[2]; Jain, R ^[3]; Landis, G A ^[4]; Flood, D J ^[2]

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1. University of Toledo, Photovoltaic Branch, MS 302-1, NASA Lewis Research Center, Cleveland, Ohio 44135 (United States)
2. NASA Lewis Research Center, Photovoltaic Branch, MS 302-1, Cleveland, Ohio 44135 (United States)
3. Cleveland State University, Photovoltaic Branch, MS 302-1, NASA Lewis Research Center, Cleveland, Ohio 44135 (United States)
4. Ohio Aerospace Institute, Photovoltaic Branch, MS 302-1, NASA Lewis Research Center, Cleveland, Ohio 44135 (United States)

Lattice-matched and strained indium gallium arsenide solar cells can be used effectively and efficiently for thermophotovoltaic applications. A 0.75 eV bandgap InGaAs solar cell is well matched to a 2000 K blackbody source with a emission peak around 1.5 {mu}m. A 0.60 eV bandgap InGaAs cell is well suited to a Ho-YAG selective emitter and a blackbody at 1500 K which have emission peak around 2.0 {mu}m. Modeling results predict that the cell efficiencies in excess of 30{percent} are possible for the 1500 K Ho-YAG selective emitter (with strained InGaAs) and for the 2000 K blackbody (with lattice-matched InGaAs) sources. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 285311
• Report Number(s): CONF-9507247--
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 358; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
BLACKBODY RADIATION
EFFICIENCY
ENERGY GAP
GALLIUM ARSENIDES
INDIUM ARSENIDES
SOLAR CELLS
THERMOPHOTOVOLTAIC CONVERTERS