Thermophotovoltaic energy converters based on thin film selective emitters and InGaAs photovoltaic cells

Journal Article · Wed Jan 31 23:00:00 EST 1996 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.49680· OSTI ID:285290

Fatemi, N S; Hoffman, R H ^[1]; Wilt, D M ^[2]; Lowe, R A ^[3]; Garverick, L M ^[1]; Scheiman, D ^[4]

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1. Essential Research, Inc., Cleveland, Ohio (United States)
2. NASA Lewis Research Center, Cleveland, Ohio (United States)
3. Kent State University, Kent, Ohio (United States)
4. NYMA, Inc., Brookpark, Ohio (United States)

This paper presents the results of an investigation to demonstrate thermophotovoltaic energy conversion using InGaAs photovoltaic cells, yttrium-aluminum-garnet- (YAG-) based selective emitters, and bandpass/reflector filters, with the heat source operating at 1100{degree}C. InGaAs cells were grown on InP by organometallic vapor phase epitaxy with bandgaps of 0.60 and 0.75 eV and coupled to Ho-, Er-, and Er-Tm-doped YAG selective emitters. Infrared reflector and/or shortpass filters were also used to increase the ratio of in-band to out-of-band radiation from the selective emitters. Efficiencies as high as 13.2{percent} were recorded for filtered converters. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 285290
• Report Number(s): CONF-9507247--
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 358; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
ALUMINIUM ARSENIDES
DESIGN
EFFICIENCY
FILM GROWTH
GALLIUM ARSENIDES
HEAT SOURCES
INFRARED RADIATION
OPTICAL FILTERS
PHOTOVOLTAIC CELLS
THERMOPHOTOVOLTAIC CONVERTERS
THIN FILMS
VPE
YAG