Modeling of low-bandgap solar cells for thermophotovoltaic applications

Journal Article · Wed Jan 04 23:00:00 EST 1995 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.47024· OSTI ID:165959

Jain, R K; Wilt, D M ^[1]; Landis, G A ^[2]; Jain, R ^[3]; Weinberg, I; Flood, D J ^[1]

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1. NASA Lewis Research Center, Cleveland, Ohio 44135 (United States)
2. NYMA, Inc. Lewis Research Center Group, Brook Park, Ohio 44142 (United States)
3. Cleveland State University, Cleveland, Ohio 44115 (United States)

Low-bandgap solar cells can be used effectively and efficiently for thermophotovoltaic applications. A 0.75 eV bandgap InGaAs solar cell is an ideal device for the Er-YAG selective emitter with a emission peak around 1.5 {mu}m. Modeling results predict that the InGaAs cell efficiencies of nearly 30% are possible for the Er-YAG selective emitter source at 1500 K. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• Sponsoring Organization: USDOE
• OSTI ID: 165959
• Report Number(s): CONF-940101--
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 321; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
ELECTRICAL PROPERTIES
EMISSION
EMISSIVITY
ENERGY GAP
GALLIUM ARSENIDES
INDIUM ARSENIDES
QUANTUM EFFICIENCY
SOLAR CELLS
TERNARY ALLOY SYSTEMS
THERMOPHOTOVOLTAIC CONVERSION
THIN FILMS