Lattice mismatched InGaAs photovoltaic devices for thermophotovoltaic power systems
- National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center
- Essential Research, Inc., Cleveland, OH (United States)
- NYMA, Inc., Brookpark, OH (United States)
- Kent State Univ., OH (United States)
Low bandgap photovoltaic devices are required for the development of thermophotovoltaic power conversion at moderate temperatures. The authors have produced In{sub x}Ga{sub 1{minus}x}As photovoltaic n/p devices on InP with bandgaps ranging from 0.75 eV to 0.60 eV. Testing under a filtered 1,500 K blackbody emitter, the 0.75 eV displayed an 18.3% conversion efficiency and the 0.60 eV device had a 6% efficiency. The devices were also tested at temperatures ranging from 25 C to 100 C. The temperature coefficient of output power increased dramatically as the bandgap decreased. Testing under rare-earth doped YAG selective emitters demonstrated the ability of these emitters to produce narrow spectral emissions.
- OSTI ID:
- 191112
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
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