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U.S. Department of Energy
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Progress report for the Department of Energy

Technical Report ·
DOI:https://doi.org/10.2172/6826659· OSTI ID:6826659
Large doses of B and C (up to 25 at %) were implanted into Nb/sub 3/Al substrates. The experimentaly determined compositional profiles from Auger analysis agreed very well with theoretically predicted profiles. There was also no significant redistribution of the B and C after heat treatments up to 850/sup 0/C. The high doses involved produced a very disordered surface layer. From reflection electron diffraction analysis it was ascertained that this layer recrystallized at 850/sup 0/C. The samples were subjected to a variety of heat treatments and superconducting transition temperatures were measured. After the recrystallization anneals, transitions in the implanted layer were observed around 10 and 11/sup 0/K. These are being related to structure and lattice parameter of the implanted layers. As is well known the T/sub c/ of A-15's is strongly dependent on lattice parameter. The smaller a/sub 0/ the higher the T/sub c/. A difference in a/sub 0/ of 0.5 percent can make a dramatic change in T/sub c/. T/sub c/'s are also very sensitive to the degree of order in A-15's. The high implantation doses used created a great deal of disorder. It was hoped that annealing removed the effect of this disorder on T/sub c/. However, it may be necessary to use a much more dramatic means of annealing, such as laser melting of the implanted layers. It has been found in ion implanted semiconductors that laser melting is a very effective way of removing the defects associated with radiation damage.
Research Organization:
Massachusetts Univ., Amherst (USA). Dept. of Mechanical Engineering
DOE Contract Number:
AS02-80ER10566
OSTI ID:
6826659
Report Number(s):
DOE/ER/10566-1
Country of Publication:
United States
Language:
English