Damage annealing behavior of 3 MeV Si/sup +/-implanted silicon

Journal Article · Mon Jul 20 04:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98912· OSTI ID:6369146

Rai, A K; Baker, J; Ingram, D C

Cross-sectional transmission electron microscopy has been used to study the recrystallization behavior of a buried amorphous layer in 3 MeV Si/sup +/-implanted (100) silicon at a dose of 5 x 10/sup 15/ cm/sup -2/. The lower (deeper) amorphous/crystalline (a/c) interface is found to be more abrupt compared to the upper (closer to the surface) a/c interface. During recrystallization similar rates of advancement of the two a/c interfaces are observed. V-shaped dislocations are observed in the completely recrystallized layer. The defect density in the upper recrystallized region is found to be higher than that in the lower recrystallized region. These observations are correlated with the shape of the damage profile. The secondary defects grown at higher temperatures (>750 /sup 0/C) are found to be very stable and difficult to anneal out. The overall recrystallization behavior of the buried amorphous layer is found to be similar to that of lower energy implants.

• Research Organization: Universal Energy Systems, Inc., 4401 Dayton-Xenia Road, Dayton, Ohio 45432
• OSTI ID: 6369146
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DAMAGE
DISLOCATIONS
ELECTRON MICROSCOPY
ELEMENTS
ENERGY RANGE
HEAT TREATMENTS
INTERFACES
IONS
LINE DEFECTS
MEV RANGE
MEV RANGE 01-10
MICROSCOPY
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RECRYSTALLIZATION
SEMIMETALS
SILICON
SILICON IONS
TRANSMISSION ELECTRON MICROSCOPY