Damage and in-situ annealing during ion implantation
Conference
·
OSTI ID:6446546
Formation of amorphous (..cap alpha..) layers in Si during ion implantation in the energy range 100 keV-11 MeV and temperature range liquid nitrogen (LN)-100/sup 0/C has been investigated. Cross-sectional transmission electron microscopy (XTEM) shows that buried amorphous layers can be created for both room temperature (RT) and LN temperature implants, with a wider 100 percent amorphous region for the LN cooled case. The relative narrowing of the ..cap alpha.. layer during RT implantation is attributed to in-situ annealing. Implantation to the same fluence at temperatures above 100/sup 0/C does not produce ..cap alpha.. layers. To further investigate in situ annealing effects, specimens already containing buried ..cap alpha.. layers were further irradiated with ion beams in the temperature range RT-400/sup 0/C. It was found that isolated small ..cap alpha.. zones (less than or equal to 50 diameter) embedded in the crystalline matrix near the two ..cap alpha../c interfaces dissolved into the crystal but the thickness of the 100 percent ..cap alpha.. layer was not appreciably affected by further implantation at 200/sup 0/C. A model for in situ annealing during implantation is presented.
- Research Organization:
- California Univ., Berkeley (USA)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 6446546
- Report Number(s):
- LBL-15489; CONF-821107-51; ON: DE83008394
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360106* -- Metals & Alloys-- Radiation Effects
AMORPHOUS STATE
ARSENIC IONS
CHARGED PARTICLES
ELECTRON MICROSCOPY
ELEMENTS
ION IMPLANTATION
IONS
LAYERS
LOW TEMPERATURE
MEDIUM TEMPERATURE
MICROSCOPY
PHOSPHORUS IONS
SEMIMETALS
SILICON
SILICON IONS
TEMPERATURE DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY
360106* -- Metals & Alloys-- Radiation Effects
AMORPHOUS STATE
ARSENIC IONS
CHARGED PARTICLES
ELECTRON MICROSCOPY
ELEMENTS
ION IMPLANTATION
IONS
LAYERS
LOW TEMPERATURE
MEDIUM TEMPERATURE
MICROSCOPY
PHOSPHORUS IONS
SEMIMETALS
SILICON
SILICON IONS
TEMPERATURE DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY