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Role of nitrogen ions in ion-beam reactive sputtering of NbN

Journal Article · · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)
DOI:https://doi.org/10.1116/1.576912· OSTI ID:6817997
;  [1];  [2]
  1. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173 (USA)
  2. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA (USA)
Using ion-beam reactive sputtering of a niobium target, we have studied the effects of energetic-nitrogen-ion bombardment on the target reaction and on the resulting NbN film properties. Nitrogen is either added into the ion source with the noble gas to obtain a beam of nitrogen and argon ions, or injected directly into the chamber as neutral molecules so the ion beam is composed of essentially all argon. The target reaction rate is seen to be controlled by the adsorbed thermal nitrogen, and only minimally affected by the presence of ionized nitrogen. Thus, argon-ion bombardment of the target is responsible for stimulating the reaction between the adsorbed nitrogen and the metal target producing the NbN layer. However, the film properties are affected by the presence of nitrogen ions. Films grown with N{sub 2} added in the ion source have a higher resistivity and lower superconducting transition temperature than films grown with N{sub 2} injected directly into the chamber. These differences increase with N{sub 2} flow; the differences are attributed to damage of the growing film by energetic nitrogen reflecting from the target, as measured by an energetic-neutral-particle detector.
OSTI ID:
6817997
Journal Information:
Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA) Vol. 8:3; ISSN 0734-2101; ISSN JVTAD
Country of Publication:
United States
Language:
English