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The ion-beam reactive sputtering process for deposition of niobium nitride thin films

Thesis/Dissertation ·
OSTI ID:5343933
Ion-beam reactive sputtering was used to examine the reaction processes and the sputtering processes relevant to the deposition of Nb and NbN thin films. It was determined that the Nb target readily reacts with neutral N{sub 2} molecules, with the reaction rate limited by the N{sub 2} arrival rate and sticking probability. The ion scattering spectroscopy (ISS) analysis also indicates that the target is nearly completely covered with nitrogen when sufficient N{sub 2} is present, which is much different than the expected surface coverage when sputtering a compound target. Analysis of the target surface using secondary-ion mass spectrometry (SIMS) reveals that the nitrogen at the target chemically reacts with the Nb. Sputtering ions are observed to have energies nearly independent of the incident ion energy or sputtering gas (argon or xenon). The properties of NbN films deposited on SiO{sub 2} are also dependent on the deposition parameters, but the {Tc} can not be increased above {approximately}12 K by altering the sputtering conditions alone. The {Tc} of NbN can be increased by depositing on single crystal MgO substrates, or by adding carbon during growth on heated SiO{sub 2} or MgO substrates.
Research Organization:
Massachusetts Inst. of Tech., Cambridge, MA (United States)
OSTI ID:
5343933
Country of Publication:
United States
Language:
English