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Analysis of reactive sputtering mechanisms for NbN film deposition

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.574316· OSTI ID:6167935
A model for the reactive sputtering mechanism is discussed to assist in the selection of the optimum sputtering parameters for the deposition of NbN films with a high critical temperature T/sub c/ and low resistivity (at 20 K). The model is based on the assumption that the reaction between the target material and the reactive gas molecules takes place at the surface of the target. Optical emission spectroscopic studies of the plasma were conducted during the deposition of NbN films by reactive dc and rf magnetron sputtering in an Ar--N2 mixture. The substrates were not heated and the substrate temperatures were kept approx. <100 C during deposition. The intensity of a Nb emission line, which gives a measure of the sputtering rate, was monitored as a function of N2 pressure. The data were fitted to the model to select the optimum nitrogen pressure at different power densities and Ar pressures. The T/sub c/ of NbN films deposited at a high rate (>25 A/s) by dc magnetron sputtering was --16 K. The highest T/sub c/ of films deposited by rf magnetron sputtering reached only --14 K due to higher levels of positive ion bombardment.
Research Organization:
Unisys, St. Paul, Minnesota 55164
OSTI ID:
6167935
Journal Information:
J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 5:5; ISSN JVTAD
Country of Publication:
United States
Language:
English