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Title: An analog memory integrated circuit for waveform sampling up to 900 MHz

Abstract

The potential of switched-capacitor technology for acquiring analog signals in high-energy physics (HEP) applications has been demonstrated in a number of analog memory designs. The design and implementation of a switched-capacitor memory suitable for capturing high-speed analog waveforms is described. Highlights of the presented circuit are a 900 MHz sampling frequency (generated on chip), input signal independent cell pedestal and sampling instances, and cell gains that are insensitive to component sizes. A two-channel version of the memory with 32 cells for each channel has been integrate in a 2-[mu]m complementary metal oxide semiconductor (CMOS) process with polysilicon-to-polysilicon capacitors. The measured rms cell response variation in a channel after cell pedestal subtraction is less than 0.3 mV across the full input signal range. The cell-to-cell gain matching is better than 0.01% rms, and the nonlinearity is less than 0.03% for a 2.5-V input range. The dynamic range of the memory exceeds 13 bits, and the peak signal-to-(noise + distortion) ratio for a 21.4 MHz sine wave sampled at 900 MHz is 59 dB.

Authors:
;  [1]
  1. Stanford Univ., CA (United States)
Publication Date:
OSTI Identifier:
6815586
Report Number(s):
CONF-931051-
Journal ID: ISSN 0018-9499; CODEN: IETNAE; TRN: 94-023097
DOE Contract Number:  
AC03-76SF00515
Resource Type:
Conference
Journal Name:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
Additional Journal Information:
Journal Volume: 41:4Pt1; Conference: NSS-MIC '93: nuclear science symposium and medical imaging conference, San Francisco, CA (United States), 30 Oct - 6 Nov 1993; Journal ID: ISSN 0018-9499
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 43 PARTICLE ACCELERATORS; ACCELERATORS; BEAM MONITORS; RECORDING SYSTEMS; RADIATION DETECTORS; DESIGN; ANALOG SYSTEMS; BEAM POSITION; DATA ACQUISITION; ELECTRON BEAMS; MEMORY DEVICES; SIGNAL-TO-NOISE RATIO; BEAMS; LEPTON BEAMS; MEASURING INSTRUMENTS; MONITORS; PARTICLE BEAMS; 440104* - Radiation Instrumentation- High Energy Physics Instrumentation; 430300 - Particle Accelerators- Auxiliaries & Components

Citation Formats

Haller, G M, and Wooley, B A. An analog memory integrated circuit for waveform sampling up to 900 MHz. United States: N. p., 1994. Web.
Haller, G M, & Wooley, B A. An analog memory integrated circuit for waveform sampling up to 900 MHz. United States.
Haller, G M, and Wooley, B A. Mon . "An analog memory integrated circuit for waveform sampling up to 900 MHz". United States.
@article{osti_6815586,
title = {An analog memory integrated circuit for waveform sampling up to 900 MHz},
author = {Haller, G M and Wooley, B A},
abstractNote = {The potential of switched-capacitor technology for acquiring analog signals in high-energy physics (HEP) applications has been demonstrated in a number of analog memory designs. The design and implementation of a switched-capacitor memory suitable for capturing high-speed analog waveforms is described. Highlights of the presented circuit are a 900 MHz sampling frequency (generated on chip), input signal independent cell pedestal and sampling instances, and cell gains that are insensitive to component sizes. A two-channel version of the memory with 32 cells for each channel has been integrate in a 2-[mu]m complementary metal oxide semiconductor (CMOS) process with polysilicon-to-polysilicon capacitors. The measured rms cell response variation in a channel after cell pedestal subtraction is less than 0.3 mV across the full input signal range. The cell-to-cell gain matching is better than 0.01% rms, and the nonlinearity is less than 0.03% for a 2.5-V input range. The dynamic range of the memory exceeds 13 bits, and the peak signal-to-(noise + distortion) ratio for a 21.4 MHz sine wave sampled at 900 MHz is 59 dB.},
doi = {},
journal = {IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)},
issn = {0018-9499},
number = ,
volume = 41:4Pt1,
place = {United States},
year = {1994},
month = {8}
}

Conference:
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