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Interfacial reactions of off-stoichiometric YBaCuO films on MgO and Si substrates

Journal Article · · Journal of the Electrochemical Society; (USA)
DOI:https://doi.org/10.1149/1.2086414· OSTI ID:6815480
;  [1];  [2]
  1. Waseda Univ., Tokyo (Japan). School of Science and Engineering
  2. Tokyo Denki Univ. (Japan)

YBaCuO films were deposited on Si and MgO substrates by RF sputtering in Ar + O{sub 2} ambient. Composition in the film is quite different from that of the target. Interfacial reactions between the film and Si or MgO substrates has been investigated by Rutherford backscattering spectroscopy. After the annealing at 800{degrees}-900{degrees}C, it has been confirmed that Cu atoms diffuse into the substrate. However, by depositing a Cu interfacial layer between YBaCuO film and the substrate, Cu diffusion is suppressed and the stoichiometric superconducting phase of Y:Ba:Cu = 1:2:3 is formed.

OSTI ID:
6815480
Journal Information:
Journal of the Electrochemical Society; (USA), Journal Name: Journal of the Electrochemical Society; (USA) Vol. 137:1; ISSN JESOA; ISSN 0013-4651
Country of Publication:
United States
Language:
English

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