Interdiffusion and interfacial reaction between an YBa/sub 2/Cu/sub 3/O/sub x/ thin film and substrates

Journal Article · Mon Oct 10 04:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100460· OSTI ID:6782286

Nakajima, H; Yamaguchi, S; Iwasaki, K; Morita, H; Fujimori, H; Fujino, Y

Interdiffusion and interfacial reaction between a sputter-deposited YBa/sub 2/Cu/sub 3/O/sub x/ thin film and substrates (MgO, sapphire, quartz, and Si) have been investigated by 2.7 MeV /sup 4/He/sup +/ Rutherford backscattering spectrometry. The diffusivities of Cu in the substrates and of the substrate elements (Mg, Al, and Si) in the Y-Ba-Cu-O thin films have been determined over the annealing temperature range from 876 to 1226 K in an oxygen atmosphere. Among three metallic elements of Y, Ba, and Cu, Cu diffuses the fastest into the substrates. Copper silicide is observed in the interfacial region between the film and the Si substrate. Among these substrates, MgO is suggested to be the most stable on annealing.

• Research Organization: Institute for Materials Research, Tohoku University, Sendai 980, Japan
• OSTI ID: 6782286
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:15; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
360204 -- Ceramics
Cermets
& Refractories-- Physical Properties
656100 -- Condensed Matter Physics-- Superconductivity
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALKALINE EARTH METAL COMPOUNDS
ANNEALING
ATOM TRANSPORT
BARIUM COMPOUNDS
BARIUM OXIDES
CHALCOGENIDES
COPPER
COPPER COMPOUNDS
COPPER OXIDES
DEPOSITION
DIFFUSION
ELEMENTS
FILMS
HEAT TREATMENTS
INTERFACES
METALS
NEUTRAL-PARTICLE TRANSPORT
OXIDES
OXYGEN COMPOUNDS
RADIATION TRANSPORT
SUBSTRATES
SUPERCONDUCTING FILMS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
YTTRIUM COMPOUNDS
YTTRIUM OXIDES