Single-ended output GaAs/AlGaAs single quantum well laser with a dry-etched corner reflector

Journal Article · Mon May 14 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103026· OSTI ID:6813264

Hagberg, M; Larsson, A; Eng, S T ^[1]

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1. Department of Optoelectronics and Electrical Measurements, Chalmers University of Technology, S-412 96 Goeteborg, Sweden (SE)

GaAs/AlGaAs single quantum well lasers with integrated corner reflectors have been fabricated using chemically assisted ion beam etching. The air-GaAs interface is internally totally reflecting, and no coherent radiation is transmitted through the corner reflector. The corner reflector laser was compared with a conventional Fabry--Perot laser cleaved from the same wafer. An 11% reduction in threshold current and a reduction of the far-field angle from 4.4{degree} to 0.7{degree} was measured.

• OSTI ID: 6813264
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:20; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
EFFICIENCY
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER MIRRORS
LASERS
MIRRORS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE FINISHING