Single-ended output GaAs/AlGaAs single quantum well laser with a dry-etched corner reflector

Journal Article · Mon May 14 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103026· OSTI ID:6813264

Hagberg, M; Larsson, A; Eng, S T ^[1]

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1. Department of Optoelectronics and Electrical Measurements, Chalmers University of Technology, S-412 96 Goeteborg, Sweden (SE)

GaAs/AlGaAs single quantum well lasers with integrated corner reflectors have been fabricated using chemically assisted ion beam etching. The air-GaAs interface is internally totally reflecting, and no coherent radiation is transmitted through the corner reflector. The corner reflector laser was compared with a conventional Fabry--Perot laser cleaved from the same wafer. An 11% reduction in threshold current and a reduction of the far-field angle from 4.4{degree} to 0.7{degree} was measured.

• OSTI ID: 6813264
• Journal Information: Applied Physics Letters; (USA), Vol. 56:20; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
LASER MIRRORS
EFFICIENCY
FABRICATION
SEMICONDUCTOR LASERS
ALUMINIUM ARSENIDES
DESIGN
ETCHING
GALLIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
LASERS
MIRRORS
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
SURFACE FINISHING
426002* - Engineering- Lasers & Masers- (1990-)