A corner reflector InGaAs-GaAs strained layer single quantum well coupled laser array

Journal Article · Sat Jan 01 00:00:00 EST 1994 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/68.265874· OSTI ID:7273521

Fang, Z J; Smith, G M; Forbes, D V; Coleman, J J ^[1]

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1. Univ. of Illinois, Urbana, IL (United States). Microelectronics Lab.

An InGaAs-GaAs-AlGaAs strained layer single quantum laser array with a reactive ion etched corner reflector array as its rear facet has been fabricated. The corner reflectors play a two-fold role as a highly reflective rear mirror and as a phase-locking coupler. Phase locked operation with beam widths as low as 0.64[degree] are obtained at pumping currents up to 4[times]I[sub th] and output powers up to 60 mW. The coupling mechanism and the benefit of the corner reflector to output performance are discussed.

• OSTI ID: 7273521
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States), Vol. 6:1; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
LASER MIRRORS
DESIGN
SEMICONDUCTOR LASERS
CHEMICAL VAPOR DEPOSITION
FABRICATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
REFLECTION
THRESHOLD CURRENT
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CURRENTS
DEPOSITION
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
MIRRORS
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
SURFACE COATING
426002* - Engineering- Lasers & Masers- (1990-)