Interfacial properties of indium tin oxide/indium phosphide devices

Journal Article · Fri Oct 15 00:00:00 EDT 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93656· OSTI ID:6812376

Sheldon, P; Ahrenkiel, R K; Hayes, R E; Russell, P E

Efficient indium tin oxide (ITO)/p-InP solar cells have been fabricated by ion beam deposition. In this letter, a critical evaluation of the ITO/InP interface is presented using complementary capacitance-voltage and ion microprobe measurements. We have found that deposition of ITO produces a semi-insulating region at the InP surface. This high resistivity layer extends about 750 A into the bulk. We have evidence that this region is due to surface accumulation of compensating impurities.

• Research Organization: Solar Energy Research Institute, Photovoltaic Devices and Measurements Branch, 1617 Cole Boulevard, Golden, Colorado 80401
• OSTI ID: 6812376
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
BEAMS
CHALCOGENIDES
CHEMICAL ANALYSIS
DEPOSITION
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EQUIPMENT
FABRICATION
IMPURITIES
INDIUM COMPOUNDS
INDIUM OXIDES
INDIUM PHOSPHIDE SOLAR CELLS
INTERFACES
ION BEAMS
ION MICROPROBE ANALYSIS
LAYERS
MICROANALYSIS
NONDESTRUCTIVE ANALYSIS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SOLAR CELLS
SOLAR EQUIPMENT
THICKNESS
TIN COMPOUNDS
TIN OXIDES