Solar-cell characteristics and interfacial chemistry of indium-tin-oxide/indium phosphide and indium-tin-oxide/gallium arsenide junctions

Journal Article · Tue May 01 00:00:00 EDT 1979 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.326337· OSTI ID:6307493

Bachmann, K J; Schreiber, H Jr; Sinclair, W R; Schmidt, P H; Thiel, F A; Spencer, E G; Pasteur, G; Feldmann, W L; SreeHarsha, K

The preparation of indium-tin-oxide (ITO)/p-InP and ITO/p-GaAs solar cells via ion-beam deposition, rf sputtering, and magnetron sputtering of ITO onto single-crystal InP and GaAs substrates is described. The properties of these solar cells are strongly affected by the fabrication conditions and are related to chemical modifications of the junctions. The solar power conversion efficiencies at air mass 2 of ITO/p-GaAs and ITO/p-InP solar cells are < or =5 and < or =14.4%, respectively.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6307493
• Journal Information: J. Appl. Phys.; (United States), Vol. 50:5
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SOLAR CELLS
SURFACE PROPERTIES
CHEMICAL VAPOR DEPOSITION
DATA
EFFICIENCY
GALLIUM ARSENIDES
INDIUM
INDIUM PHOSPHIDES
ION BEAMS
MONOCRYSTALS
SPUTTERING
SUBSTRATES
TIN OXIDES
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHALCOGENIDES
CHEMICAL COATING
CRYSTALS
DEPOSITION
DIRECT ENERGY CONVERTERS
ELEMENTS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
METALS
OXIDES
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SURFACE COATING
TIN COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion