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Junction characteristics of indium tin oxide/indium phosphide solar cells

Technical Report ·
OSTI ID:6721946

Efficient indium tin oxide (ITO)/p-InP solar cells have been fabricated. Typical uncorrected efficiencies range from 9 to 12% at Am1 intensities. It is shown that deposition of ITO causes a semi-insulating layer at the InP surface as determined by C-V measurements. The thickness of this layer is approximately 750 A. This high resistivity region is believed to be due to surface accumulation of Fe at the ITO/InP interface.

Research Organization:
Solar Energy Research Inst., Golden, CO (USA)
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6721946
Report Number(s):
SERI/TP-213-1756; CONF-820906-29; ON: DE83002182
Country of Publication:
United States
Language:
English