Junction characteristics of indium tin oxide/indium phosphide solar cells

Conference · Wed Sep 01 00:00:00 EDT 1982 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5489825

Sheldon, P; Ahrenkiel, R K; Hayes, R E; Kazemrski, L L; Nottenburg, R; Russell, P E

Efficient indium tin oxide (ITO)/p-InP solar cells have been fabricated. Typical uncorrected efficiencies range from 9-12% at AM1 intensities. It is shown that deposition of ITO causes a semi-insulating layer at the InP surface as determined by C-V measurements. The thickness of this layer is approximately 750 A. The authors believe that this high resistivity region is due to surface accumulation of Fe at the ITO/InP interface.

• Research Organization: Solar Energy Research Institute, Golden, CO
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 5489825
• Report Number(s): CONF-820906-
• Journal Information: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States); ISSN CRCND
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHALCOGENIDES
DEPOSITION
DIMENSIONS
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
FABRICATION
INDIUM PHOSPHIDE SOLAR CELLS
INTERFACES
IRON
JUNCTIONS
LAYERS
METALS
OXIDES
OXYGEN COMPOUNDS
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
QUANTUM EFFICIENCY
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
THICKNESS
TIN COMPOUNDS
TIN OXIDES
TRANSITION ELEMENTS