Coupled stripe Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well lasers defined by impurity-induced (Si) layer disordering

Journal Article · Mon Mar 16 04:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98103· OSTI ID:6809101

Deppe, D G; Jackson, G S; Jr, Holonyak N; Burnham, R D; Thornton, R L

A high-performance index-guided ten-stripe Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well heterostructure laser array fabricated using Si diffusion to effect impurity-induced layer disordering between the active region stripes is described. The fine spacing (1 ..mu..m) between (3 ..mu..m) emitters allows coupled mode laser operation at thresholds (I/sub th/) as low as 3--4 mA per stripe and with stable near- and far-field patterns in spite of band filling (single quantum well). This form of coupled stripe laser is capable of high efficiency and high power output (250 mW at 300 mA) as well as a large excitation range extending from I/sub th/ to 9I/sub th/.

• Research Organization: Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801
• OSTI ID: 6809101
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ATOM TRANSPORT
DIFFUSION
EFFICIENCY
ELEMENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
IMPURITIES
JUNCTIONS
LASERS
NEUTRAL-PARTICLE TRANSPORT
PERFORMANCE
PNICTIDES
POWER
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON