High-power gain-guided coupled-stripe quantum well laser array by hydrogenation

Journal Article · Mon Feb 29 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99349· OSTI ID:5369382

Jackson, G S; Hall, D C; Guido, L J; Plano, W E; Pan, N; Jr, Holonyak N; Stillman, G E

High-power coupled-stripe (ten-stripe) Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well lasers that are fabricated by hydrogenation are described. Continuous (cw) room-temperature thresholds as low as I/sub th/ = 90 mA and internal quantum efficiency as high as 85% are demonstrated. Continuous 300 K laser operation generating 2 x 375 mW (0.75 W) at 910 mA (10I/sub th/) or 57% efficiency is described (8-..mu..m-wide stripes on 12 ..mu..m centers). Minimal heating effects are observed up to the point of catastrophic failure.

• Research Organization: Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801
• OSTI ID: 5369382
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
EXPERIMENTAL DATA
FABRICATION
FAILURES
GAIN
HIGH TEMPERATURE
HYDROGENATION
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
PNICTIDES
POWER
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD CURRENT