Low-threshold gain-guided coupled-stripe quantum well diode lasers by laser-assisted processing

Journal Article · Mon Aug 24 00:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98346· OSTI ID:6410718

Epler, J E; Burnham, R D; Paoli, T L

The first coupled-stripe laser diodes fabricated by a laser-assisted process are reported. In this process, a focused laser beam is scanned across AlGaAs-GaAs heterostructure material to pattern a shallow resistive region in the GaAs cap layer. In this manner, the distribution of the injected current is patterned to fabricate gain-guided four-stripe diode lasers. The devices operate continuously (cw) at room temperature with a low threshold current (36 mA) and high differential quantum efficiency (80%). A maximum cw power efficiency of 48% is obtained at 350 mA. The gain-guided structure favors the lower order array modes, thus the far-field pattern is dominated by a central lobe.

• Research Organization: Xerox Palo Alto Research Center, Palo Alto, California 94304
• OSTI ID: 6410718
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 51:8
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
OPERATION
PERFORMANCE
EXPERIMENTAL DATA
GAIN
QUANTUM EFFICIENCY
THRESHOLD CURRENT
AMPLIFICATION
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
INFORMATION
LASERS
NUMERICAL DATA
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)