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Solid-phase epitaxy of Ti-implanted LiNbO/sub 3/. [Ti in LiNbO/sub 3/]

Conference ·
OSTI ID:6805291
The implantation of Ti into LiNbO/sub 3/ has been studied as a means of altering the optical index of refraction to produce optical waveguides. Implanting 2 x 10/sup 17/ atoms/cm/sup 2/ of 360-keV Ti at liquid nitrogen temperature produces a highly damaged region extending to a depth of about 4000 A. Solid-phase epitaxial regrowth of the LiNbO/sub 3/ can be achieved by annealing in a water-saturated oxygen atmosphere at 400/sup 0/C, though complete removal of the residual damage usually requires temperatures in excess of 800/sup 0/C. The solid-phase epitaxial regrowth rate exhibits an activation energy of 2 eV at doses below 3 x 10/sup 16/ Ti/cm/sup 2/, but both the regrowth rate and activation energy decrease at higher doses. At doses above 1 x 10/sup 17/ Ti/cm/sup 2/, the solid-phase epitaxial regrowth occurs only at temperatures above 800/sup 0/C.
Research Organization:
Oak Ridge National Lab., TN (USA)
DOE Contract Number:
AC05-84OR21400
OSTI ID:
6805291
Report Number(s):
CONF-870438-14; ON: DE87009683
Country of Publication:
United States
Language:
English