Solid-phase epitaxy of Ti-implanted LiNbO/sub 3/

Journal Article · Wed Mar 01 04:00:00 EST 1989 · J. Mat. Res.; (United States)

OSTI ID:6266247

Poker, D B; Thomas, D K

The solid-phase epitaxy of LiNbO/sub 3/ following ion implantation of Ti dopant for the purpose of producing optical waveguides has been studied. Implanting 360-keV Ti at liquid nitrogen temperature produces a highly damaged region extending to a depth of about 400 nm. This essentially amorphous region can be recrystallized epitaxially by annealing in a water-saturated oxygen atmosphere at temperatures near 400 /sup 0/C, though complete removal of all irradiation-induced damage requires temperatures in excess of 600 /sup 0/C. The activation energy of the regrowth is 2.0 eV for implanted fluences below 3 x 10/sup 16/ Ti/cm/sup 2/. At higher fluences of the regrowth proceeds more slowly, and Ti dopant segregates at the regrowth interface. Complete recrystallization following high-dose implantation requires annealing temperatures in excess of 800 /sup 0/C.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
• OSTI ID: 6266247
• Journal Information: J. Mat. Res.; (United States), Journal Name: J. Mat. Res.; (United States) Vol. 4:2; ISSN JMREE
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ALKALI METAL COMPOUNDS
AMORPHOUS STATE
ANNEALING
CHARGED PARTICLES
DOSE RATES
ELASTIC SCATTERING
ENERGY RANGE
EPITAXY
FIBERS
HEAT TREATMENTS
HIGH TEMPERATURE
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
LITHIUM COMPOUNDS
LOW TEMPERATURE
NIOBATES
NIOBIUM COMPOUNDS
OPTICAL FIBERS
OXYGEN COMPOUNDS
RECRYSTALLIZATION
REFRACTORY METAL COMPOUNDS
RUTHERFORD SCATTERING
SCATTERING
SOLIDS
TITANIUM COMPOUNDS
TITANIUM IONS
TRANSITION ELEMENT COMPOUNDS
VERY HIGH TEMPERATURE