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Optical waveguide formation by ion implantation of Ti or Ag

Conference ·
OSTI ID:5620205
Ion implantation of Ti into LiNbO/sub 3/ has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO/sub 3/ can be regrown by solid-phase epitaxy at 400/sup 0/C with a regrowth velocity of 250 A/min, the higher concentrations of Ti required to form a waveguide (approx.10%) slow the regrowth considerably, so that temperatures approaching 800/sup 0/C are used. Complete removal of residual damage requires annealing temperatures of 1000/sup 0/C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Ag-implanted LiNbO/sub 3/, however, occurs at much lower temperatures. The regrowth is completed at 400/sup 0/C, and annealing of all residual damage occurs at or below 800/sup 0/C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 x 10/sup 17/ Ag/cm/sup 2/. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti. 7 refs., 4 figs.
Research Organization:
Oak Ridge National Lab., TN (USA)
DOE Contract Number:
AC05-84OR21400
OSTI ID:
5620205
Report Number(s):
CONF-8711126-1; ON: DE88004595
Country of Publication:
United States
Language:
English