Formation of optical waveguides by ion implantation

Technical Report · Fri Nov 20 04:00:00 EST 1987

OSTI ID:5681069

Poker, D B

The use of ion implantation to introduce Ti into LiNbO/sub 3/ for the production of optical waveguides offers several advantages over the use of thermal diffusion. Higher concentrations and steeper gradients of dopant can be obtained, while reducing processing times and temperatures. However, the implantation process amorphizes the substrate, which must be regrown by solid phase epitaxy. This epitaxy was found to be extremely sensitive to the dopant species and concentration, which led to a search for species with better annealing characteristics. Though Ag and Pb allow regrowth at lower temperatures, the tendency of Ti to oxidize during regrowth is essential for the retention of dopant during annealing. Thus, the dopant exhibiting the slowest epitaxial regrowth ultimately produces the best waveguides.

• Research Organization: Oak Ridge National Lab., TN (USA)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5681069
• Report Number(s): DOE/OR/21400-T325; ON: DE88003894
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
42 ENGINEERING
420200 -- Engineering-- Facilities
Equipment
& Techniques
ALKALI METAL COMPOUNDS
AMORPHOUS STATE
ANNEALING
CHARGED PARTICLES
CHEMICAL REACTIONS
COMPARATIVE EVALUATIONS
CRYSTAL DOPING
CRYSTAL GROWTH
ENERGY RANGE
EPITAXY
EQUIPMENT
HEAT TREATMENTS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
LEAD IONS
LITHIUM COMPOUNDS
NIOBATES
NIOBIUM COMPOUNDS
OPTICAL EQUIPMENT
OXIDATION
OXYGEN COMPOUNDS
OXYGEN IONS
PRODUCTION
REFRACTORY METAL COMPOUNDS
SILVER IONS
TITANIUM IONS
TRANSITION ELEMENT COMPOUNDS
WAVEGUIDES