Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates
GaAs/AlGaAs quantum wells (QWs) were grown by molecular beam epitaxy on GaAs (100) substrates patterned with ridges and grooves in the (011-bar) direction. Low-temperature cathodoluminescence was used to measure the Al fraction and QW thickness on top of the ridges and grooves as a function of ridge and groove width. Surface diffusion during growth depletes Ga from the side facets while increasing the incorporation of Ga on the (100) sections of ridges and grooves. The QW thickness on top of a ridge grown at 710 /sup 0/C increases from 72 to 95 A, and the Al fraction x decreases from x = 0.33 to x = 0.29 as the ridge width is narrowed from 30 to 4 ..mu..m. Graded refractive index separate confinement heterostructure lasers with nominally 70 A QWs and Al/sub 0.2/Ga/sub 0.8/As barriers were grown on patterned substrates at 695 and 725 /sup 0/C. Lasers fabricated on the overgrown 4-..mu..m-wide ridges have a 20 meV decrease in emission energy compared to laser diodes on 30 ..mu..m ridges.
- Research Organization:
- IBM Research Division, Zurich Research Laboratory, 8803 Rueschlikon, Switzerland
- OSTI ID:
- 6804170
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:5; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CATHODOLUMINESCENCE
DIFFUSION
DIMENSIONS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
HIGH TEMPERATURE
JUNCTIONS
LASERS
LUMINESCENCE
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THICKNESS