Visible, room-temperature, surface-emitting laser using an epitaxial Fabry--Perot resonator with AlGaAs/AlAs quarter-wave high reflectors and AlGaAs/GaAs multiple quantum wells
Journal Article
·
· Appl. Phys. Lett.; (United States)
We report operation of a new surface-emitting laser. This epitaxial laser is fabricated with molecular beam epitaxy by the growth of quarter-wave high reflectors of AlAs/Al/sub 0.4/Ga/sub 0.6/As (710 A/630 A) which surround a 4.5-..mu..m-thick multiple quantum well of GaAs/Al/sub 0.4/Ga/sub 0.6/As (100 A/200 A). We characterize the structure with cw spectroscopy (absorption, reflection, and luminescence) and investigate stimulated emission spectra under pulsed photopumping. When photopumped, the structure lases in its as-grown condition without need of substrate removal, cleaving, or heatsinking. The lasing wavelength is as short as 7400 A and can be tuned to as long as 8400 A by positioning the pump spot to different regions across the wafer. The pulsed threshold irradiance has a very weak temperature dependence varying from 6 x 10/sup 5/ W/cm/sup 2/ at 4.2 K to 1.6 x 10/sup 6/ W/cm/sup 2/ at 295 K.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6947184
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:18; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ABSORPTION SPECTROSCOPY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EMISSION
EMISSION SPECTRA
EMISSION SPECTROSCOPY
ENERGY-LEVEL TRANSITIONS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LAYERS
LUMINESCENCE
MOLECULAR BEAM EPITAXY
OPERATION
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECTRA
SPECTROSCOPY
STIMULATED EMISSION
SUPERLATTICES
SURFACE PROPERTIES
420300* -- Engineering-- Lasers-- (-1989)
ABSORPTION SPECTROSCOPY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EMISSION
EMISSION SPECTRA
EMISSION SPECTROSCOPY
ENERGY-LEVEL TRANSITIONS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LAYERS
LUMINESCENCE
MOLECULAR BEAM EPITAXY
OPERATION
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECTRA
SPECTROSCOPY
STIMULATED EMISSION
SUPERLATTICES
SURFACE PROPERTIES