Threshold characteristics of epitaxial Al(Ga,As) surface-emitting lasers with integrated quarter-wave high reflectors

Journal Article · Thu Dec 01 04:00:00 EST 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.342033· OSTI ID:6748038

Gourley, P L; Drummond, T J; Zipperian, T E; Reno, J L; Plut, T A

We report a study of threshold characteristics of as-grown surface-emitting lasers fabricated with molecular-beam epitaxy by the monolithic integration of two quarter-wave high reflectors (mirrors) of AlAs/Al/sub 0.4/Ga/sub 0.6/As surrounding an active spacer layer. The spacer was either a multiple quantum well of GaAs/Al/sub 0.4/Ga/sub 0.6/As (100 A/200 A) or GaAs. Several structures were grown corresponding to different mirror reflectance and different spacer thicknesses from ultrashort 0.9 to 10 ..mu..m. One of the structures was chemically etched to form a two-dimensional array of microlasers. All of the structures were photopumped at room temperature, and the lasing threshold was determined. Without any lateral confinement, the threshold irradiance was as low as 2 x 10/sup 5/ W/cm/sup 2/. Near-field images of the light emitted slightly above threshold reveal several competing filaments. This competition broadens the lasing linewidth, but can be controlled by lateral confinement schemes.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• OSTI ID: 6748038
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:11; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
ENERGY
ETCHING
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
LAYERS
LINE WIDTHS
NUMERICAL DATA
OPERATION
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE FINISHING
THRESHOLD ENERGY