High-efficiency TEM/sub 00/ continuous-wave (Al,Ga)As epitaxial surface-emitting lasers and effect of half-wave periodic gain

Journal Article · Mon Mar 27 04:00:00 EST 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100717· OSTI ID:6224549

Gourley, P L; Brennan, T M; Hammons, B E; Corzine, S W; Geels, R S; Yan, R H; Scott, J W; Coldren, L A

We report room-temperature, continuous-wave (cw), photopumped operation of (Al,Ga)As surface-emitting lasers grown by molecular beam epitaxy. These monolithic semiconductor lasers comprise two multilayer semiconductor mirrors surrounding a layered active region. In the active region, GaAs quantum wells are spaced with half-wave periodicity to center on standing-wave maxima of the cavity optical field. By comparing threshold data for different lasers grown with and without half-wave periodicity, we observe the first experimental evidence for reduced cw lasing threshold (as low as 2 x 10/sup 4/ W/cm/sup 2/ ) with periodic gain in an epitaxial surface-emitting laser. Up to 50 mW with high efficiency (35% total, 80% differential) and narrow spectral linewidth (2 A) have been measured. A very high quality beam with low divergence (2.5/sup 0/) and circular TEM/sub 00/ profile has been observed. All of these observations represent significant advances for surface-emitting laser technology.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• OSTI ID: 6224549
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:13; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
DATA
EFFICIENCY
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OPERATION
PERFORMANCE
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STIMULATED EMISSION
THRESHOLD ENERGY