High-efficiency, continuous-wave, epitaxial surface-emitting laser with pseudomorphic InGaAs quantum wells
Journal Article
·
· Appl. Phys. Lett.; (United States)
We report the first continuous-wave (cw) photopumped operation of surface-emitting lasers comprising pseudomorphic InGaAs quantum wells. The lasers were grown by molecular beam epitaxy and incorporate epitaxial quarter-wave AlAs/GaAs mirrors surrounding an active region. In the active region, 50 A InGaAs quantum wells are distributed with half-wave periodicity to center on cavity standing wave maxima. Lasing is observed from 78 to 250 K in the spectral range 920--950 nm, where the GaAs substrate is transparent. Thresholds were as low as 1.5 x 10/sup 4/ W/cm/sup 2/, and overall (differential) output power efficiency was as high as 35% (85%) with up to 60 mW in a low divergence beam. Both periodic gain and biaxial compressive layer strain contribute to the reduced lasing threshold. The laser gain length is only 550 A (11 quantum wells). The possibility of surface-emitting lasing in single quantum wells is discussed.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185
- OSTI ID:
- 6331454
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:15; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
High-efficiency TEM(00) continuous-wave (Al,Ga)As epitaxial surface-emitting lasers and effect of half-wave periodic gain
High-efficiency TEM/sub 00/ continuous-wave (Al,Ga)As epitaxial surface-emitting lasers and effect of half-wave periodic gain
Threshold characteristics of epitaxial Al(Ga,As) surface-emitting lasers with integrated quarter-wave high reflectors
Technical Report
·
Sun Mar 26 23:00:00 EST 1989
·
OSTI ID:5289464
High-efficiency TEM/sub 00/ continuous-wave (Al,Ga)As epitaxial surface-emitting lasers and effect of half-wave periodic gain
Journal Article
·
Sun Mar 26 23:00:00 EST 1989
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6224549
Threshold characteristics of epitaxial Al(Ga,As) surface-emitting lasers with integrated quarter-wave high reflectors
Journal Article
·
Wed Nov 30 23:00:00 EST 1988
· J. Appl. Phys.; (United States)
·
OSTI ID:6748038
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
DATA
EFFICIENCY
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
INFRARED RADIATION
LASER MIRRORS
LASERS
LOW TEMPERATURE
MIRRORS
MOLECULAR BEAM EPITAXY
NEAR INFRARED RADIATION
NUMERICAL DATA
OPERATION
PNICTIDES
POWER
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STIMULATED EMISSION
THRESHOLD ENERGY
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
DATA
EFFICIENCY
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
INFRARED RADIATION
LASER MIRRORS
LASERS
LOW TEMPERATURE
MIRRORS
MOLECULAR BEAM EPITAXY
NEAR INFRARED RADIATION
NUMERICAL DATA
OPERATION
PNICTIDES
POWER
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STIMULATED EMISSION
THRESHOLD ENERGY