High-efficiency TEM(00) continuous-wave (Al,Ga)As epitaxial surface-emitting lasers and effect of half-wave periodic gain

Technical Report · Mon Mar 27 04:00:00 EST 1989

OSTI ID:5289464

Gourley, P L; Brennan, T M; Hammons, B E; Corzine, S W; Geels, R S

This report is on room temperature, continuous-wave (c-w), photopumped operation of (Al,Ga)As surface-emitting lasers grown by molecular beam epitaxy. These monolithic semiconductor lasers comprise two multilayer semiconductor mirrors surrounding a layered active region. In the active region, GaAs quantum wells are spaced with half-wave periodicity to center on standing-wave maxima of the cavity optical field. By comparing threshold data for different lasers grown with and without half-wave periodicity, the first experimental evidence is observed for reduced c-w lasing threshold (as low as 20,000 W/sq cm) with periodic gain in an epitaxial surface-emitting laser. Up to 50 mW with high efficiency (35% total, 80% differential) and narrow spectral linewidth (2 A) have been measured. A very high-quality beam with low divergence (2.5 deg) and circular TEM(00) profile has been observed. All of these observations represent significant advances for surface-emitting laser technology.

• Research Organization: California Univ., Santa Barbara, CA (USA). Dept. of Electrical and Computer Engineering
• OSTI ID: 5289464
• Report Number(s): AD-A-212319/8/XAB
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
EFFICIENCY
ELEMENTS
EMISSION SPECTRA
EPITAXY
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER CAVITIES
LASER MIRRORS
LASERS
LAYERS
METALS
MIRRORS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
OPTICAL PUMPING
PHYSICAL PROPERTIES
PNICTIDES
PUMPING
QUANTUM EFFICIENCY
QUANTUM ELECTRONICS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SPECTRA
SURFACES