GaAs/AlGaAs distributed feedback structure with multiquantum well for surface-emitting laser

Journal Article · Fri Aug 01 00:00:00 EDT 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.337328· OSTI ID:5453617

Nomura, Y; Shinozaki, K; Asakawa, K; Ishii, M

We demonstrate laser emission by photopumping at room temperature from a distributed feedback structure for a surface-emitting laser constructed by alternating growths of a GaAs/AlGaAs multiquantum well and an Al/sub 0.7/Ga/sub 0.3/As layer using molecular-beam epitaxy. A threshold photoexcitation intensity lower than 3.1 x 10/sup 5/ W/cm/sup 2/, a 34-nm longitudinal mode spacing, and a 2.3-nm peak width of the laser emission were observed for the 6-..mu..m-thick multilayer.

• Research Organization: Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara, Kawasaki 211, Japan
• OSTI ID: 5453617
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 60:3; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASER RADIATION
LASERS
LAYERS
LINE WIDTHS
NUMERICAL DATA
OPTICAL PUMPING
PNICTIDES
PUMPING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STIMULATED EMISSION
THRESHOLD ENERGY