Room-temperature operation of distributed-Bragg-confinement Ga/sub 1-x/Al/sub x/As-GaAs lasers grown by metalorganic chemical vapor deposition
Journal Article
·
· Appl. Phys. Lett.; (United States)
Room-temperature operation of new type of Ga/sub 1-x/Al/sub x/As-GaAs laser employing distributed Bragg reflectors for optical and carrier confinement has been demonstrated. These distributed-Bragg-confinement lasers are grown by metalorganic chemical vapor deposition and exhibit low-threshold current densities and small angular beam divergence.
- Research Organization:
- Rockwell International, Electronic Devices Division, Electronics Research Center, Anaheim, California 92803
- OSTI ID:
- 6803682
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:1; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Journal Article
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Fri Apr 14 23:00:00 EST 1978
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OSTI ID:5091889
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OSTI ID:5886948
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ENERGY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
OPERATION
OPTICAL PROPERTIES
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD ENERGY
WAVEGUIDES
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ENERGY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
OPERATION
OPTICAL PROPERTIES
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD ENERGY
WAVEGUIDES