Continuous room-temperature multiple-quantum-well Al/sub x/Ga/sub 1-x/As-GaAs injection lasers grown by metalorganic chemical vapor deposition

Journal Article · Mon Oct 01 04:00:00 EDT 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91206· OSTI ID:5886948

Dupuis, R D; Dapkus, P D; Holonyak, N Jr; Kolbas, R M

Room-temperature (approx.26 /sup 0/C) continous operation of Al/sub x/Ga/sub 1-x/As-GaAs multiple-quantum-well injection lasers has been achieved. These devices are grown by metalorganic chemical vapor deposition and employ active regions consisting of six GaAs quantum wells having a thickness L/sub z/approx.120 A separated by five Al/sub 0.30/Ga/sub 0.70/As barriers also approx.120 A thick. These laser diodes operate on LO-phonon-assisted confined-particle transitions and exhibit low threshold current densities (J/sub th/approx.1660 A/cm/sup 2/) and high total external differential quantum efficiencies (eta/sub ext/approx.85%).

• Research Organization: Rockwell International, Electronic Devices Division, Electronics Research Center, Anaheim, California 92803
• OSTI ID: 5886948
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 35:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CURRENT DENSITY
DEPOSITION
DIMENSIONS
EFFICIENCY
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
MEDIUM TEMPERATURE
METALS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
THICKNESS