Continuous 300 /sup 0/K laser operation of single-quantum-well Al/sub x/Ga/sub 1-x/As-GaAs heterostructure diodes grown by metalorganic chemical vapor deposition

Journal Article · Thu Feb 15 00:00:00 EST 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90753· OSTI ID:6484069

Dupuis, R D; Dapkus, P D; Chin, R; Holonyak, N Jr; Kirchoefer, S W

Stripe-geometry single-quantum-well Al/sub x/Ga/sub 1-x/As-GaAs double-heterostructure laser diodes (L/sub z/approx.200 A) grown by metalorganic chemical vapor deposition are shown to operate continuously at 300 /sup 0/K on the first (n=1) electron--to--heavy--hole (e..-->..hh) or first (n'=1') electron--to--light--hole (e..-->..lh) confined-particle transitions (h..omega..-E/sub g/approx.11 meV). These laser diodes exhibit an external differential quantum efficiency as high as eta/sub ext/approx.80% (output power 5.4 mW at 65 mA drive current).

• Research Organization: Rockwell International, Electronic Devices Division, Electronics Research Center, Anaheim, California 92803
• OSTI ID: 6484069
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 34:4
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
CHEMICAL VAPOR DEPOSITION
DATA
EFFICIENCY
ENERGY EFFICIENCY
GEOMETRY
MEDIUM TEMPERATURE
OPERATION
SEMICONDUCTOR DIODES
CHEMICAL COATING
DEPOSITION
INFORMATION
LASERS
MATHEMATICS
SEMICONDUCTOR DEVICES
SURFACE COATING
420300* - Engineering- Lasers- (-1989)