Effect of illumination uniformity on GaAs photoconductive switches
- Univ. of Rochester, NY (United States). Lab. for Laser Energetics
The dynamic behavior of a GaAs photoconductive switch was studied with an electro-optic imaging system during the first 2 ns after optical illumination. The switch behavior changed as a function of the spatial distribution of the optical illumination. Symmetric and asymmetric illumination schemes were investigated experimentally with their electro-optic imaging system. The electric fields were significantly enhanced in the regions of low photo-carrier density. Approximately 1 ns after illumination the simple longitudinal variation of the electric field gave way to nonuniform transverse structure. The experimental results were modeled by treating the switch as an integral part of a transmission line consisting of discrete elements. The experimental results matched the predictions of the transmission-line model in terms of the electric-field enhancements and efficiency.
- DOE Contract Number:
- FC03-92SF19460
- OSTI ID:
- 6797593
- Journal Information:
- IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States) Vol. 30:12; ISSN 0018-9197; ISSN IEJQA7
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRO-OPTICAL EFFECTS
ELECTROMAGNETIC FIELDS
EQUIPMENT
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
MATHEMATICAL MODELS
NUMERICAL DATA
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR SWITCHES
SWITCHES