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Effect of illumination uniformity on GaAs photoconductive switches

Journal Article · · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/3.362723· OSTI ID:6797593
;  [1]
  1. Univ. of Rochester, NY (United States). Lab. for Laser Energetics

The dynamic behavior of a GaAs photoconductive switch was studied with an electro-optic imaging system during the first 2 ns after optical illumination. The switch behavior changed as a function of the spatial distribution of the optical illumination. Symmetric and asymmetric illumination schemes were investigated experimentally with their electro-optic imaging system. The electric fields were significantly enhanced in the regions of low photo-carrier density. Approximately 1 ns after illumination the simple longitudinal variation of the electric field gave way to nonuniform transverse structure. The experimental results were modeled by treating the switch as an integral part of a transmission line consisting of discrete elements. The experimental results matched the predictions of the transmission-line model in terms of the electric-field enhancements and efficiency.

DOE Contract Number:
FC03-92SF19460
OSTI ID:
6797593
Journal Information:
IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States) Vol. 30:12; ISSN 0018-9197; ISSN IEJQA7
Country of Publication:
United States
Language:
English

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