Effect of illumination uniformity on GaAs photoconductive switches

Journal Article · Thu Dec 01 00:00:00 EST 1994 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/3.362723· OSTI ID:6797593

Donaldson, W R; Mu, L ^[1]

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1. Univ. of Rochester, NY (United States). Lab. for Laser Energetics

The dynamic behavior of a GaAs photoconductive switch was studied with an electro-optic imaging system during the first 2 ns after optical illumination. The switch behavior changed as a function of the spatial distribution of the optical illumination. Symmetric and asymmetric illumination schemes were investigated experimentally with their electro-optic imaging system. The electric fields were significantly enhanced in the regions of low photo-carrier density. Approximately 1 ns after illumination the simple longitudinal variation of the electric field gave way to nonuniform transverse structure. The experimental results were modeled by treating the switch as an integral part of a transmission line consisting of discrete elements. The experimental results matched the predictions of the transmission-line model in terms of the electric-field enhancements and efficiency.

• DOE Contract Number: FC03-92SF19460
• OSTI ID: 6797593
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Vol. 30:12; ISSN 0018-9197
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR SWITCHES
ELECTRO-OPTICAL EFFECTS
ELECTROMAGNETIC FIELDS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
MATHEMATICAL MODELS
PHOTOCONDUCTIVITY
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
GALLIUM COMPOUNDS
INFORMATION
NUMERICAL DATA
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SWITCHES
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)