Tests On Photoconductive Semiconductor Switches For Subnanosecond Risetime, Multimegavolt pulseral-applications [Book Chapter]

Conference · Mon Jun 17 04:00:00 EDT 1991 · Eighth IEEE International Conference on Pulsed Power

DOI:https://doi.org/10.1109/ppc.1991.733245· OSTI ID:5272909

Carboni, V. B. ^[1]; Smith, L. D. ^[1]; Pixton, R. M. ^[2]; Abdalla, M. D. ^[2]; Zutavern, F. J. ^[3]; Loubriet, G. M. ^[3]; O'Malley, M. W. ^[3]

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1. Pulse Sciences, Inc., San Leandro, CA (United States)
2. BDM Management Services Company, Albuquerque, NM (United States)
3. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Experiments were performed to determine the applicability of photoconductive semiconductor switches (PCSS) for use as output switches in subnanosecond pulse for EMP simulators. Lateral switches made of Gallium Arsenide and Silicon with 1.5 cm long insulating regions immersed in Fluorinert were tested in a 50 ohm tri-plate transmission line geometry. Mode locked and Q-switched lasers were used to trigger both a gas switched Marx generator which pulse-charged the transmission line in 100--150 ns and to illuminate the PCSS via an optical delay line. Illuminating beam energies and electric field strengths at switchout were varied to determine minimum risetimes and light energies required for triggering. The GaAs switches were operated in the high gain (lock-on) mode. Risetimes as fast as 600 ps were observed using a mode locked laser and 700 ps using a Q-switched laser. The minimum light energy required to trigger GaAs was 22 {mu}J and the highest switched fields for both GaAs and Si is about 60 kV/cm.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE; Weapons Lab
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5272909
• Report Number(s): SAND--90-3101C; CONF-910640--45; ON: DE91018797; CNN: F29601-87-C-0201; ISBN: 0-7803-0177-3
• Conference Information: Journal Name: Eighth IEEE International Conference on Pulsed Power
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603 -- Materials-- Properties
42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
DIELECTRIC PROPERTIES
ELECTRIC FIELDS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
FUNCTION GENERATORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
NEODYMIUM LASERS
PHYSICAL PROPERTIES
PNICTIDES
PULSE GENERATORS
PULSE RISE TIME
RESOLUTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR SWITCHES
SEMIMETALS
SILICON
SOLID STATE LASERS
SWITCHES
TESTING
TIME RESOLUTION
TIMING PROPERTIES