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U.S. Department of Energy
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Subnanosecond, high voltage photoconductive switching in GaAs

Conference ·
OSTI ID:6517053
; ;  [1];  [2]
  1. Lawrence Livermore National Lab., CA (USA)
  2. Rockwell International Corp., Anaheim, CA (USA)

We are conducting research on the switching properties of photoconductive materials to explore their potential for generating high-power microwaves (HPM) and for high rep-rate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanche-like mode (the optical pulse only controls switch closing). Operating in the linear mode, we have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lock-on modes, high fields are switched with lower laser pulse energies, resulting in higher efficiencies; but with measurable switching delay and jitter. We are currently investigating both large area (1 cm{sup 2}) and small area (<1 mm{sup 2}) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 {mu}m.

Research Organization:
Lawrence Livermore National Lab., CA (USA)
Sponsoring Organization:
DOE/DP
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
6517053
Report Number(s):
UCRL-JC-104969; CONF-9011125--3; ON: DE91002671
Country of Publication:
United States
Language:
English