Electro-optic imagery of high-voltage GaAs photoconductive switches

Journal Article · Sat Dec 31 23:00:00 EST 1994 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.370037· OSTI ID:6602960

Falk, R A; Adams, J C; Capps, C D; Ferrier, S G; Krinsky, J A ^[1]

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1. Boeing Defense and Space Group, Seattle, WA (United States)

The authors present electro-optic images of GaAs high-voltage photoconductive switches utilizing the electro-optic effect of the semi-insulating GaAs substrate. Experimental methodology for obtaining the images is described along with a self-calibrating data reduction algorithm. Use of the technique for observing fabrication defects is shown.

• OSTI ID: 6602960
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States) Vol. 42:1; ISSN 0018-9383; ISSN IETDAI
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
DATA PROCESSING
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRO-OPTICAL EFFECTS
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PNICTIDES
PROCESSING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR SWITCHES
SWITCHES