35-kV GaAs subnanosecond photoconductive switches

Journal Article · Fri Nov 30 23:00:00 EST 1990 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.64522· OSTI ID:6908504

Pocha, M D; Druce, R L ^[1]

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1. Lawrence Livermore National Lab., CA (United States)

Photoconductive switches are one of the few devices that allow the generation of high-voltage electrical pulses with subnanosecond rise time. The authors are exploring high-voltage, fast-pulse generation using GaAs photoconductive switches. They have been able to generate 35-kV pulses with rise times as short as 135 ps using 5-mm gap switches and have achieved electric field hold-off of greater than 100 kV/cm. They have also been able to generate an approximately 500-ps FWHM on/off electrical pulse with an amplitude of approximately 3 kV using neutron-irradiated GaAs having short carrier life times. This paper describes the experimental results and discusses fabrication of switches and the diagnostics used to measure these fast signals. They also describe the experience with the nonlinear lock-on and avalanche modes of operation observed in GaAs.

• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 6908504
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States) Vol. 37:12; ISSN 0018-9383; ISSN IETDAI
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ELECTRICAL EQUIPMENT
ELECTRONIC EQUIPMENT
EQUIPMENT
FABRICATION
FUNCTION GENERATORS
HIGH-VOLTAGE PULSE GENERATORS
PHOTOCONDUCTORS
PULSE GENERATORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR SWITCHES
SWITCHES