Numerical analysis of electric field profiles in high-voltage GaAs photoconductive switches and comparison to experiment

Journal Article · Wed Dec 01 00:00:00 EST 1993 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.249485· OSTI ID:5435788

Kingsley, L E ^[1]; Donaldson, W R ^[2]

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1. Army Research Lab., Fort Monmouth, NJ (United States). Pulse Power Center
2. Univ. of Rochester, NY (United States). Lab. for Laser Energetics

The electric field in GaAs photoconductive switches has been observed with an ultrafast electro-optic imaging system to develop complex spatial and temporal structure immediately after illumination. High-field domains form at the switch cathode as the photogenerated carriers recombine for bias fields above [approximately]10 kV/cm. At these biases, the switch also remained conductive for a much longer time ([approximately]100 ns) than the material recombination time ([approximately]1 ns). A model which includes field-dependent mobility was developed to explain this data. Simulation of the electric field profile across the switch indicates that high-field domains which form at the switch cathode are the result of negative differential resistance.

• OSTI ID: 5435788
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Vol. 40:12; ISSN 0018-9383
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR SWITCHES
ELECTRIC FIELDS
CARRIER DENSITY
LASER RADIATION
PHOTOCONDUCTIVITY
THEORETICAL DATA
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
EQUIPMENT
INFORMATION
NUMERICAL DATA
PHYSICAL PROPERTIES
RADIATIONS
SEMICONDUCTOR DEVICES
SWITCHES
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)