Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition
- Division of Engineering, Brown University, Providence, Rhode Island 02912 (United States) Oak Ridge Associated Universities, Oak Ridge, Tennessee 37831 (United States)
- Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
Polycrystalline silicon carbide was deposited from methyltrichlorosilane in cold-walled and hot-walled reactors, on (100) SiC surface layers that were formed on (100) Si wafers. The initial stages of the process were studied by electron microscopy after relatively short deposition times. Submicron surface features nucleated with a specific crystallographic orientation with respect to the substrate, where h111j planes in the b[minus]SiC substrate coincided with h0001j planes in the a[minus]SiC features. These a[minus]SiC features occurred only at twins on h111j planes of the b[minus]SiC substrate. This demonstrates that nucleation under these conditions is controlled by defects in the substrate. Surface contamination and the reactor configuration also had substantial effects on nucleation.
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6786967
- Journal Information:
- Journal of Materials Research; (United States), Journal Name: Journal of Materials Research; (United States) Vol. 8:5; ISSN JMREEE; ISSN 0884-2914
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CONTAMINATION
CRYSTALS
DEPOSITION
ELECTRON MICROSCOPY
MICROSCOPY
NUCLEATION
POLYCRYSTALS
SILICON CARBIDES
SILICON COMPOUNDS
SURFACE COATING
SURFACE CONTAMINATION