In-situ light-scattering measurements during the CVD of polycrystalline silicon carbide
Conference
·
OSTI ID:10142181
- Oak Ridge National Lab., TN (United States)
Light-scattering was used to monitor the chemical vapor deposition of silicon carbide from methyltrichlorosilane. Nucleation and growth of SiC caused changes in surface topography that altered the angular scattering spectrum generated by a He-Ne laser. These scattering spectra were analyzed to obtain information about the occurring nucleation and growth processes.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 10142181
- Report Number(s):
- CONF-921101--103; ON: DE93009725; CNN: Agreement 1954-C027-A1
- Country of Publication:
- United States
- Language:
- English
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