In-situ light-scattering measurements during the CVD of polycrystalline silicon carbide

Conference · Tue Dec 31 23:00:00 EST 1991

OSTI ID:6677934

Sheldon, B W ^[1]; Reichle, P A; Besmann, T M ^[2]

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1. Oak Ridge National Lab., TN (United States) Brown Univ., Providence, RI (United States). Div. of Engineering
2. Oak Ridge National Lab., TN (United States)

Light-scattering was used to monitor the chemical vapor deposition of silicon carbide from methyltrichlorosilane. Nucleation and growth of SiC caused changes in surface topography that altered the angular scattering spectrum generated by a He-Ne laser. These scattering spectra were analyzed to obtain information about the occurring nucleation and growth processes.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: DOD; Department of Defense, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6677934
• Report Number(s): CONF-921101-103; ON: DE93009725; CNN: Agreement 1954-C027-A1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
HYDRIDES
HYDROGEN COMPOUNDS
LIGHT SCATTERING
NUCLEATION
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
SCATTERING
SILANES
SILICON CARBIDES
SILICON COMPOUNDS
SURFACE COATING
SURFACES