The nucleation and growth of polycrystalline silicon carbide
Silicon carbide was deposited from methyltrichlorosilane onto polished polycrystalline SiC substrates at reduced pressure, and the resultant surface morphology was characterized by analyzing the angular spectrum of scattered light which was generated with a He-Ne laser. Light-scattering analyses incorporating specific nucleation and growth models were developed. With these methods, it was possible to analyze the angular scattering spectra and directly measure the nucleation and growth rates. These results were verified by using image analysis to quantify the number and size distribution of surface features that were observed with scanning electron microscopy. The nucleation and growth rates that were obtained by fitting the models to the image-analysis results were in good agreement with the rates obtained from the light-scattering. 7 refs., 2 figs.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- Sponsoring Organization:
- DOD; DOE/ER
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6001702
- Report Number(s):
- CONF-901105-104; ON: DE91008887
- Country of Publication:
- United States
- Language:
- English
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CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CRYSTALS
DEPOSITION
ELECTRON MICROSCOPY
GAS LASERS
HELIUM-NEON LASERS
LASERS
LIGHT SCATTERING
MICROSCOPY
MICROSTRUCTURE
NUCLEATION
PHYSICAL PROPERTIES
POLYCRYSTALS
ROUGHNESS
SCANNING ELECTRON MICROSCOPY
SCATTERING
SILICON CARBIDES
SILICON COMPOUNDS
SURFACE COATING
SURFACE PROPERTIES