Stress releasing mechanisms in In[sub 0. 2]Ga[sub 0. 8]As layers grown on misoriented GaAs [001] substrate

Journal Article · Mon May 31 04:00:00 EDT 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.109213· OSTI ID:6785742

Werner, P; Zakharov, N D; Chen, Y; Liliental-Weber, Z; Washburn, J ^[1]; Klem, J F; Tsao, J Y ^[2]

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1. Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)

The influence of substrate misorientation on the structure and morphology of In[sub 0.2]Ga[sub 0.8]As layers grown by molecular beam epitaxy on vicinal, near (001), GaAs substrates was investigated by transmission electron microscopy. The substrates were tilted at angles between 0[degree] and 10[degree] in [l angle]100[r angle], [l angle]110[r angle], and [l angle]120[r angle] directions. In layers which exceeded the critical thickness, networks of 60[degree] dislocations running along the intersections of the four [l brace]111[r brace] planes with the interface were observed. Growth uniformity and anisotropy of strain relaxation were shown to depend on the type of growth steps introduced by a particular tilting direction.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6785742
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 62:22; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRON MICROSCOPY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
LINE DEFECTS
MICROSCOPY
MOLECULAR BEAM EPITAXY
MORPHOLOGY
ORIENTATION
PNICTIDES
RELAXATION
STRESS RELAXATION
TRANSMISSION ELECTRON MICROSCOPY