Atomic rearrangement at the interface of annealed ZnSe films grown on vicinal Si(001) substrates

Journal Article · Mon Aug 15 00:00:00 EDT 1994 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.50.4416· OSTI ID:7256402

Romano, L T; Bringans, R D; Knall, J; Biegelsen, D K; Garcia, A; Northrup, J E ^[1]; O'Keefe, M A ^[2]

---

1. Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304 (United States)
2. National Center for Electron Microscopy, Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)

Significant atomic rearrangement at the interface was found to take place after post-growth annealing treatments of epitaxial ZnSe on As-passivated Si(001) substrates which were tilted by 4[degree] towards the [1[bar 1]0] direction. The thermal stability of the ZnSe/As:Si interface was studied by rapid thermal annealing at temperatures up to 960 [degree]C after growing an epitaxial GaAs cap layer to prevent evaporation of the ZnSe during the anneals. The ZnSe/As:Si interface was examined by high-resolution electron microscopy. After an anneal at 900 [degree]C the ZnSe/As:Si interface transformed from an atomically smooth interface found in the as-grown films to a facetted structure with [l brace]111[r brace]-oriented sidewalls that extended preferentially in the [1[bar 1]0] direction. The 60[degree] dislocations that were previously observed along this direc- tion combined into closely spaced pairs or into Lomer dislocations which were associated with the facets. We present a model for the atomic structure of the facetted interface which is consistent with the experimental data and satisfies electron-counting considerations. Total-energy calculations of the ZnSe/As:Si(001) interface were compared with those for the [l brace]111[r brace] interfaces seen after facetting.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7256402
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 50:7; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
INTERFACES
ZINC SELENIDES
ANNEALING
ARSENIC
DISLOCATIONS
ENERGY
MOLECULAR BEAM EPITAXY
TEMPERATURE RANGE 1000-4000 K
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
EPITAXY
HEAT TREATMENTS
LINE DEFECTS
SELENIDES
SELENIUM COMPOUNDS
SEMIMETALS
TEMPERATURE RANGE
ZINC COMPOUNDS
360602* - Other Materials- Structure & Phase Studies