Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates

Journal Article · Sun Mar 28 23:00:00 EST 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.108632· OSTI ID:6719254

Chen, Y; Zakharov, N D; Werner, P; Liliental-Weber, Z; Washburn, J ^[1]; Klem, J F; Tsao, J Y ^[2]

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1. Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)

The atomic structure of misfit dislocations at In[sub 0.2]Ga[sub 0.8]As/GaAs interfaces misoriented 2[degree]--10[degree] from (001) has been investigated by high-resolution electron microscopy. The misfit dislocations are predominantly dissociated 60[degree] dislocations consisting of 90[degree] and 30[degree] Shockley partial dislocations and enclosed stacking faults. These dissociated 60[degree] dislocations form increasingly asymmetrically on the different [l brace]111[r brace] glide planes as the misorientation increases. The 90[degree] partial dislocations are not confined to the interface, but lie 0--100 A beneath it. The 30[degree] partial dislocations, in turn, are pushed even further into the substrate.

• DOE Contract Number: AC03-76SF00098; AC04-76DP00789
• OSTI ID: 6719254
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 62:13; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRON MICROSCOPY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
JUNCTIONS
LINE DEFECTS
MICROSCOPY
PNICTIDES
RELAXATION
SEMICONDUCTOR JUNCTIONS
STRESS RELAXATION