Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates
- Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)
The atomic structure of misfit dislocations at In[sub 0.2]Ga[sub 0.8]As/GaAs interfaces misoriented 2[degree]--10[degree] from (001) has been investigated by high-resolution electron microscopy. The misfit dislocations are predominantly dissociated 60[degree] dislocations consisting of 90[degree] and 30[degree] Shockley partial dislocations and enclosed stacking faults. These dissociated 60[degree] dislocations form increasingly asymmetrically on the different [l brace]111[r brace] glide planes as the misorientation increases. The 90[degree] partial dislocations are not confined to the interface, but lie 0--100 A beneath it. The 30[degree] partial dislocations, in turn, are pushed even further into the substrate.
- DOE Contract Number:
- AC03-76SF00098; AC04-76DP00789
- OSTI ID:
- 6719254
- Journal Information:
- Applied Physics Letters; (United States), Vol. 62:13; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
DISLOCATIONS
HETEROJUNCTIONS
INDIUM ARSENIDES
ELECTRON MICROSCOPY
EPITAXY
INTERFACES
STRESS RELAXATION
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
LINE DEFECTS
MICROSCOPY
PNICTIDES
RELAXATION
SEMICONDUCTOR JUNCTIONS
360602* - Other Materials- Structure & Phase Studies