Nucleation of misfit dislocations in In[sub 0. 2]Ga[sub 0. 8]As epilayers grown on GaAs substrates

Journal Article · Mon Jan 23 04:00:00 EST 1995 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.114069· OSTI ID:6654349

Chen, Y; Liliental-Weber, Z; Washburn, J ^[1]; Klem, J F; Tsao, J Y ^[2]

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1. Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)

Misfit dislocation arrays in In[sub 0.2]Ga[sub 0.8]As epilayers grown on GaAs substrates tilted 2[degree]--10[degree] away from exact (001) toward varied directions have been studied by transmission electron microscopy. A method has been developed to determine the glide plane and the Burgers vector of each misfit dislocation in the tilted InGaAs/GaAs interfaces. Based on experimental observations and theoretical analyses, it is proposed that a stacking fault surrounded by a 30[degree] partial is at first generated by a growth error, followed by thermally activated nucleation of a 90[degree] partial dislocation that removes the stacking fault and forms a 60[degree] dislocation. From the frequency of nucleation events versus the dislocation glide force, the energy barrier for dislocation nucleation of [alpha] and [beta] 90[degree] partial dislocations was determined to be equal to 1.5 and 1.4 eV, respectively.

• DOE Contract Number: AC03-76SF00098; AC04-94AL85000
• OSTI ID: 6654349
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 66:4; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360606 -- Other Materials-- Physical Properties-- (1992-)
ARSENIC COMPOUNDS
ARSENIDES
BURGERS VECTOR
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRON MICROSCOPY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
LINE DEFECTS
MICROSCOPY
NUCLEATION
PNICTIDES
TRANSMISSION ELECTRON MICROSCOPY